LKR 15.00
This Power MOSFET is the second generation of
STMicroelectronics unique “single feature size”
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance,
rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility
Specifications
Current
Continuous Drain Current - 200mA
Pulsed Drain Current - 500mA
Voltage
Drain-Source Voltage - 60V
Gate-Source Voltage - ± 20V
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