Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universially preferred for
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
Specifications
Current
Continuous Drain Current @ 10V, TC = 25 °C - 50A
Continuous Drain Current @ 10V, TC = 100 °C- 36A
Pulsed Drain Current - 200A
Voltage
Drain-Source Voltage - 60V
Gate-Source Voltage - ± 20V
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