IRF630 N-Channel MOSFET

IRF630 N-Channel MOSFET
LKR 60.00
Out of Stock

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

IRF630 N-Channel MOSFET Datasheet

Specifications

Current
Continuous Drain Current @ 10V, TC = 25 °C - 9A Continuous Drain Current @ 10V, TC = 100 °C- 5.7A Pulsed Drain Current - 36A
Voltage
Drain-Source Voltage - 200V Gate-Source Voltage - ± 20V