IRF830 N-Channel MOSFET

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IRF830 N-Channel MOSFET
LKR 75.00
Out of Stock
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Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

IRF830 N-Channel MOSFET Datasheet


Specifications

Current
Continuous Drain Current @ 10V, TC = 25 °C - 4.5A Continuous Drain Current @ 10V, TC = 100 °C- 2.9A Pulsed Drain Current - 18A
Voltage
Drain-Source Voltage - 500V Gate-Source Voltage - ± 20V