Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
IRF830 N-Channel MOSFET Datasheet
Specifications
Current
Continuous Drain Current @ 10V, TC = 25 °C - 4.5A
Continuous Drain Current @ 10V, TC = 100 °C- 2.9A
Pulsed Drain Current - 18A
Voltage
Drain-Source Voltage - 500V
Gate-Source Voltage - ± 20V